Intel has published a paper about its 18A (1.8nm-class) fabrication process at the VLSI 2025 symposium, consolidating all its ...

Fig. 1: Decoupling capacitor hierarchy. The capacitors filtering the highest frequencies are in the chip itself, ... “These days they’re almost all MIM [metal-insulator-metal] or MOM ...

Another significant improvement in the N2 generation is the integration of the super high-performance metal-insulator-metal (SHPMIM) capacitor. This new capacitor doubles the capacitance density while ...

Figure 3 depicts two methods of power GaN IC integration. GaN-A (left) is based on the standard GaN-on-Si HEMT process flow used for discrete power GaN devices. The combination of e-HEMT and d-HEMT, ...

To characterize the dielectric properties experimentally, the team first constructed metal-insulator-metal capacitor structures featuring lanthanum oxychloride. Electrical probing returned an ...

Accurate capacitance measurement is critical for the development of metal–insulator–metal (MIM) capacitors for semiconductor devices. In this study, we compare the frequency-dependent capacitances of ...

By incorporating a backside decoupling capacitor (metal-insulator-metal capacitor), IR drop is reduced even further. The design is scalable beyond the 2nm node because no standard cell area is ...

However, it was discovered in 2011 that when cooled below 0°C, its electrical resistance increases, and it becomes an insulator. When a metal undergoes the transition from its metallic phase at ...

Eric Beyne, VP R&D of imec’s 3D System Integration: “In a 2022 VLSI paper by R. Chen et al., we combined backside processing with the implementation of a 2.5D (i.e., pillar-like) metal-insulator-metal ...

This week, at the 2022 IEEE VLSI Symposium on Technology and Circuits, imec, a-leading research and innovation hub in nanoelectronics and digital technologies, presents the first experimental ...