News
1d
Tom's Hardware on MSNIntel details 18A process technology — takes on TSMC 2nm with 30% density gain and 25% faster generational performanceIntel has published a paper about its 18A (1.8nm-class) fabrication process at the VLSI 2025 symposium, consolidating all its ...
A novel pomegranate-like Ni-NSs@MSNSs nanocatalyst was successfully synthesized via a modified Stöber method, and its application in the hydrogenation of dicyclopentadiene (DCPD) was firstly reported.
One of the significant challenges in advancing RFMEMS switch technology is achieving low actuation voltage and high capacitance ratio, simultaneously. Reducing the structural spring constant and ...
Moiré superlattices of transitional-metal dichalcogenides exhibit strong electron–electron interaction that has led to experimental observations of Mott insulators and generalized Wigner crystals. In ...
SiC market. According to Yole Group, the SiC device market is expected to reach $10 billion by 2029, with a 24% CAGR from 2023 to 2029. By then, SiC will account for 28% of the $35.7 billion power ...
The two widely accepted mechanisms of the insulator-metal Mott-Hubbard transitions which have been considered up until now are driven by the band-filling or bandwidth effects. We found a different ...
Dense fluid metallic hydrogen occupies the interiors of Jupiter, Saturn, and many extrasolar planets, where pressures reach millions of atmospheres. Planetary structure models must describe accurately ...
Abstract: In this letter, we proposed and experimentally demonstrated a metal-insulator-semiconductor (MIS) ferroelectric capacitor with non-volatile programmable capacitance. By switching the ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results