Infineon is advancing industry-wide standardization by offering its CoolGaN G3 transistors in silicon MOSFET packages.
Microsoft has long been working on an alternative that could cut down on the overhead by using components that are far more ...
Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...
A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” ...
A team of German researchers has developed a miniaturized solar cell experiment for nanosatellites. It was used to test ...
The TSC family has been designed to help customers achieve excellent robustness with maximum power density and system ...
A new technical paper titled “Accelerating OTA Circuit Design: Transistor Sizing Based on a Transformer Model and Precomputed Lookup Tables” was published by University Minnesota and Cadence. “Device ...
Test your knowledge of F1 circuit layouts by correctly identifying each of the 2025 tracks solely based on a diagram of the circuit. While we can all remember the names and countries of the F1 ...
During the past few decades, the evolution of microelectronic components, and particularly field-effect transistors (FETs), has mainly been driven by the innovations in inorganic electronic materials.
Abstract: Heterogeneous integration of III–V narrow bandgap transistors on silicon technology is desirable ... A vertical In–Ga–As MOSFET with 1600 nanowire channels and 110nm gate length achieved a ...
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