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This work presents the first room temperature operation of GaAs based ridge waveguide semiconductor lasers containing lithographically defined InGaAs quantum dots as the active region. Semiconductor ...

The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-μm. The quantum dot lasing wavelength is sensitive ...

Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, ...