The team has also developed an innovative hot-emitter transistor (HOET), achieving an ultralow sub-threshold swing of less than 1 mV/dec and a peak-to-valley current ratio exceeding 100.

These electrons are zippy and help the transistor switch rapidly, but they also tend to travel up towards the gate and leak out. To prevent them from escaping, the device can be capped with a ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

The transistor laser is “a major technology breakthrough in high-speed optoelectronics,” comments K.C. Wang of HR Laboratories in Malibu, Calif.

Supplied in a GaN PX package measuring 9 x 7.6 x 0.45mm, the GS65516T also features 650V E-HEMT include reverse current capability, integral source sense and zero reverse recovery loss.The device is ...

A new whitepaper has claimed the semiconductor industry is losing billions of dollars due to something few outside the field ...

According to ST, the transistors offer an 'exceptional combination' of high current capability, collector emitter blocking voltage and ultra low collector emitter saturation voltage. They are designed ...

Diodes Incorporated has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500 mA-rated open-drain transistors, where all their sources are connected to a common ground ...

Start-up HVVi recently introduced the three-member HVVFET (high-voltage-vertical-field-effect-transistor) family of RF-transistor products. Targeting pulsed-radar and avionics applications, the ...

"Smallest transistor switches current with a single atom in solid electrolyte." ScienceDaily. ScienceDaily, 16 August 2018. <www.sciencedaily.com / releases / 2018 / 08 / 180816101939.htm>.

Adds Dr. Casey Smith, first author of the paper, "The superior drive current and conductance at the system supply voltage (V dd)of 1V compared to other top-gated devices requiring undesirable seed ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain tran ...