Abstract: The double-sided row hammer (rh) effect at the silicon level for sub-20 nm dynamic random access memory (DRAM) is systematically investigated for the first time. Based on 3D TCAD simulation, ...
Abstract: A Dual Material Double Gate TFET (DMDG-TFET) model with gate stacking has been presented for low power applications. It uses 2D layered material in the source region to improve the bandgap ...
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