Semiconductor wafer direct bonding combined with mechanical grinding of the donor wafer and chemical etching of the remaining silicon as well as the SiGe layer is an alternative to the ...

N- and p-MOSFETs have been fabricated in strained Si on SiGe on insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the ...