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Transistor parametric drift due to conductionmode hot carrier degradation (HCD) in n-MOSFETs is reviewed, for longand short-channel length (LCH) devices having different source/drain (S/D) junction ...

Starting with the basic assumption of no saturation or hysteresis, and with distribution of armature phase m. m. f. effectively sinusoidal as far as regards phenomena dependent upon rotor position, ...