News

Abstract: This work demonstrates a novel junction termination extension (JTE) with a graded charge profile for vertical GaN p-n diodes. The fabrication of this JTE obviates GaN etch and requires only ...
Generative adversarial network (GAN) has achieved remarkable success in generating high-quality synthetic data by learning the underlying distributions of target data. Recent efforts have been devoted ...
Man, 72, says Gan Siow Huang didn't intentionally ignore him when he went to shake her hand. He said Gan is a friendly person and the video was taken out of context. Daniel Seow.
SINGAPORE – A cultural group has released footage to clear the air over a handshake incident that led to online criticism of Minister of State for Foreign Affairs and Trade and Industry Gan Siow Huang ...
Maccabiah 2025 will host 8,000+ athletes from 55 countries. Highlights include a star-studded Opening Ceremony, competitions, and Expo Maccabiah in Tel Aviv-Jaffa.
Four-star center Gan-Erdene Solongo has committed to Notre Dame. Author: Trevor Trowbridge. Jun 9, 2025 10:59 AM EDT. In this story: Notre Dame Fighting Irish.
Infineon’s radiation-hardened GaN HEMT is the first in-house manufactured device qualified to the Joint Army Navy Space (JANS) MIL-PRF-19500/794 specification—the highest quality certification issued ...
Today, we're taking a look at the Ugreen 500w GaN Charger. This hefty charger is perfect for those looking to charge multiple devies at once while maintaining a constant rate of electricity.
Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology.Complementing the company’s rad-hard ...
Previously, direct bonding to GaN layers without solder or bonding material was difficult due to the large grain size and poor surface roughness (5–6 nm) of polycrystalline diamond. However, Sumitomo ...
Range includes one of the first DLA JANS certified GaN devices Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based on its ...