ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ternary 0, +1, −1 digital signals using the improved MOSFET and FinFET field-effect transistors.

One of AMD's key announcements at Computex 2025 was the new mid-range Radeon RX 9060 XT graphics card. This is the third ...

June 2, 2015 – GLOBALFOUNDRIES, a leading provider of advanced semiconductor manufacturing technology, today announced it has reached a critical milestone in providing a robust design infrastructure ...

NXP Semiconductors today unveiled its new S32R47 imaging radar processors in 16 nm FinFET technology ... driving automation Level 2+(L2+)/ Level 3 (L3) as well as an increasing number of vehicles ...

The radar chip gives more speed, uses less space, supports AI, helps cars drive with fewer antennas, lower cost, and better ...

TSMC's new 2nm process node is the first time the company will be using all-around gate transistor (GAAFET) architecture, replacing the FinFET technology that has been used for many years now.

NXP Semiconductors NV NXPI showcased its new S32R47 imaging radar processors in 16 nm FinFET technology on Thursday ... automation Level 2+(L2+)/ Level 3 (L3), with an increasing number of ...

today unveiled its new S32R47 imaging radar processors in 16 nm FinFET technology, building on NXP's proven expertise in the imaging radar space. The third generation of imaging radar processors ...

In a 10-nm FinFET, the alpha-induced SER decreases by 13.4×, and the neutroninduced SER decreases by 3.1×, compared to the 14-nm FinFET technology. The SER improvement is analyzed with the ...

Shanghai, China—Jun.3, 2021 -- Brite Semiconductor (“Brite”), a leading provider of custom ASIC design, manufacturing and IP, today announced the launch of ONFI (Open NAND Flash Interface) 4.2 IO and ...

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