Samsung is adopting the GAA architecture for 3-nm process nodes to overcome the physical scaling and performance limitations of the FinFET architecture. Samsung’s fab executives are quick to point out ...

TSMC has successfully conducted its full-node advance from 5-nm to 3-nm chip manufacturing process based on tried-and-test FinFET transistor architecture. According to media reports, Apple has secured ...

Samsung calls its implementation of 3 nm GAAFET transistors multi-bridge-channel field-effect transistors (MBCFET). The company touts a series of advantages over 7nm FinFET, as MBCFET can work at ...

TSMC also plans to start mass-producing the 3-nm chips later this year, but would continue to use the FinFET largely for stability. “Samsung is taking risks by adopting the 3-nm process earlier ...

The tapeout project, geared toward advancing 3-nm chip design ... and physical-synthesis engine that addresses the latest FinFET process node requirements, improving RTL designer productivity ...

but that happens at around 3-nm or 2-nm node dimensions. If you’re a leading foundry and you’ve mastered the fabrication of fins, you’ll try to squeeze the most you can out of the FinFET.

Samsung said on Thursday that it has started mass production of chips using its 3-nanometer (nm) process node ... level compared to the previous FinFET transistor architecture.

Bringing together NXP’s high-performance S32 automotive processors with fast and highly reliable next-generation non-volatile memory in 16 nm FinFET technology ... of code in ~3 seconds compared ...

TSMC has successfully conducted its full-node advance from 5-nm to 3-nm chip manufacturing process based on tried-and-test FinFET transistor architecture. According to media reports, Apple has secured ...