Mirage News

New Approach Unveiled for Next-Gen Transistor Design

Key TakeawaysBerkeley Lab scientists showed a novel way to build advanced transistors decades before similar structures ...
Nanowerk

Optimizing nanoscale transistor performance through gate metal work function selection

(Nanowerk Spotlight) For new generation electronic appliances advanced nanoscale transistors are in demand which needs precise biasing of each device. These stringent biasing conditions can be relaxed ...
InfoWorld

AMD boosts transistor speed with metal gates

Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...
Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Electronic Design

Transistor Recovers From Midlife Crisis With Fundamental Material Changes

Not since Neil Armstrong took his first steps on the moon has the transistor seen such a dramatic change, and that change holds some big promises. "Intel has developed a complete high-k plus ...
Nature

Insulated Gate Bipolar Transistor Technologies

Insulated Gate Bipolar Transistor (IGBT) technologies have evolved significantly over recent decades to meet the stringent requirements of high-power and high-efficiency applications. Combining the ...
AZOM

1D Metallic Gate Electrodes for Ultra-Miniature Transistors

A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
Science Daily

Scientists discover way to 'grow' sub-nanometer sized transistors

A research team has implemented a novel method to achieve epitaxial growth of 1D metallic materials with a width of less than 1 nm. The group applied this process to develop a new structure for 2D ...

Chuangqi New Energy Obtains Patent for Vertical Plug IGBT Heat Dissipation Structure: Can It Lead the Technological Innovation in New Energy Vehicles?

The patent pertains to a heat dissipation structure for vertical plug IGBT (Insulated Gate Bipolar Transistor). IGBT is one of the key components in the electric drive system of new energy vehicles, ...
EDN

Gate driver for GaN transistors adds galvanic isolation

A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...