Although TSMC's N2 is the company's first process technology to adopt gate-all-around (GAA) nanosheet transistors, the node has lower defect density than its predecessors at the same stage of ...

Some more information about N5, N3 and N2 has become available. TSMC had already provided low expectations, yet still managed to underdeliver. Intel could have a staggering 3x transistor density ...

Intel's Intel 4 (7nm EUV) reduces SRAM bitcell size to 0.024µm^² from 0.0312µm^² while Intel 7 (formerly known as 10nm Enhanced SuperFin) manages 27.8 Mib/mm^², which is a bit behind TSMC's ...

TSMC's next-gen 2nm process node (N2) is progressing smoothly, with defect density (D0) matching its 5nm process, and surpassing its 3nm and 7nm nodes at similar stages of development. 2 VIEW ...

Significant power, performance, and density improvements. TSMC has revealed further details about its N2 (2nm-class) fabrication process at the IEEE International Electron Device Meeting (IEDM).

TSMC, by contrast, isn't expecting to produce chips on its equivalent N2 process until 2025. So, in overall TL;DR terms, we're looking at Intel on par with TSMC later this year and actually back ...

TSMC stated that N3E is already in high volume production for mobile and HPC/AI products with excellent yield. N3P entered volume production in the last quarter of 2024 and is slated to succeed N3E.

A recent analysis sheds light on the increasing wafer prices and the diminishing transistor density gains Apple faces. Let's rewind to 2013 and the A7, Apple's first 64-bit chip built on TSMC's ...