A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic ...

More information: Shih-Hung Cheng et al, Gate-controllable two-dimensional transition metal dichalcogenides for spintronic memory, Journal of Alloys and Compounds (2024).

Artist’s impression of the quantum spin Hall effect in a graphene-based spintronic device, integrated in a chip. The blue and red spheres are spin-up and spin-down electrons traveling along the ...

Feb 07, 2025 New AI function on the horizon thanks to electrically programmable spintronic device (Nanowerk News) Artificial Intelligence (AI) transformational impact is well under way. But as AI ...

Feb 08, 2025 Gate-controllable two-dimensional transition metal dichalcogenides for spintronic memory (Nanowerk News) The rapid advancement of technologies like artificial intelligence (AI) and the ...