Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...

It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

It’s based on a design by [DL5NEG] that uses a single Schottky diode and a handful of passive ... Chief among these details is the physical layout of the PCB, which features a stripline of ...

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the ...

Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where speed ...

Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the ...