Thus, RRAM is robust and efficient for both code storage and data logging in the same memory device. Through optimizations such as byte re-writability and eliminating erase operations during data ...

However, a drawback of RRAM fabrication is that the memory device is not in one of the two electrical resistance states needed for operation. A high forming current is required to set the memory ...

This work addresses the RRAM concept from materials, device, circuit, and application viewpoints, focusing on the physical device properties and the requirements for storage and computing applications ...

The team created a memory storage device that can operate as an RRAM and an LEM at the same time, using just perovskite. A microscope image of the different layers of the new memory device ...

and Resistive Random Access Memory (RRAM). Not only do these embedded memories provide the density, capacity, and scalability for modern processing requirements, they're also optimized for different ...

oxide RRAM data storage with a piezoelectric ceramic element that served both as pressure sensor and power supply. The current generated by the piezo element is used to power the memory device and ...

Early results of using device-aware testing on alternative memories ... when and where DAT will be applied. For memory devices, fabricated MRAM and RRAM devices and their DAT optimization shows that ...

This device is known as ferroelectric RAM or FeRAM. It is non-volatile like flash memory, meaning the device remembers the information even when the power is off in the form of polarization.

Researchers at Fudan University develop a picosecond-level flash memory device in their lab. GAO ERQIANG/CHINA DAILY Researchers from Fudan University in Shanghai have developed a picosecond-level ...

The reversal of activated magnetic domains in the device determines its relaxation behavior, which is related to its short-term memory capability. In addition, researchers controlled the sweeping ...