Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the ...

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy. AIP Advances, 2013; 3 (8): 082107 DOI: 10.1063/1.4818119; ...

WASHINGTON, D.C. Sept. 20, 2013 -- Memory based on electrically-induced "resistive switching" effects have generated a great deal of interest among engineers searching for faster and smaller ...

Which structure has optimal resistive switching characteristics? Date: August 8, 2014 Source: World Scientific Summary: Researchers fabricated Pt/TiOx/ZnO/n+-Si structures and investigated the ...

The theory suggests that resistive switching is an intrinsic property of the S-monovacancy inhabited MoS 2 and is independent of the electrode materials. Thus, it explains switching with inert ...

Traditional physical-based models have generally been used to model the resistive-switching behavior of resistive-switching memory (RSM). Recently, vacancy-based conduction-filament (CF) growth models ...

Mechanical resistive switching reset is known at the macroscale, in the coherer devices Guglielmo Marconi exploited when he first developed the radio telegraph system in 1894. Those devices consisted ...

Resistive switching in memristive devices typically involves the formation of localized conductive paths within an insulating layer. These conductive filaments (CFs) are often associated with the ...

Cambridge scientists have developed a new prototype for computer memory that could make for faster chips that could hold up to 100 times more data. The system is made up of barium bridges between ...

A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge ...

They investigated the effects of TiOx interlayer thickness on the resistive switching performance. The findings show that the Pt/TiOx (5nm)/ZnO/n+-Si structure has the optimal resistive switching ...