The NAND gate is a circuit that outputs '0' when both inputs are '1', and '0' otherwise, so if you arrange the NAND gate as follows, the Invert circuit is completed.

With the two diodes reversed and a 910 Ohm resistor removed, a NOR gate is created. The next step was to build a S-R latch using the NAND gates and inverters, which holds some basic memory.

While this might pose an issue for traditional 3D NAND processing, a new proposed technique would allow it — building the memory cells and logic on different wafers and hybrid-bonding them together. A ...

To assess the strain effect on circuit-level performance, SPICE simulations were conducted for a 5-stage ring oscillator and a 2-input NAND gate using the neural compact model. The propagation delay ...

Figure 2 Schematic diagram of wire break detector using CMOS memory cell (shown in broken box). If using the CD40106, only one gate is needed for the oscillator (Schmitt inputs). An additional gate ...

Samsung teases next-gen 400-layer V-NAND coming in 2026: expect even bigger storage devices, faster ... (CMOS Bonded Array). We can expect 60% higher bit density, ...

Tokyo-based Toshiba Corp and its Irvine, Calif.-based subsidiary Toshiba America Electronic Components this week detailed its 16-Gb NAND flash memory chip, manufactured on its 43-nm process technology ...

SK hynix said Thursday it has developed a mobile universal flash storage (UFS) chip based on the world's highest 321-layer 1 terabit NAND flash technology, delivering faster, more power-efficient ...

The inherent value of using SLC NAND, legacy flash memory technology in current applications is explored in this FAQ. Readers will learn why SLC still plays an important role ...