According to reports, at the IEEE International Solid-State Circuits Conference (ISSCC), Samsung engineers shared the manufacturing details of the upcoming 3nm GAE MBCFET chip. GAAFET ...

The Samsung Foundry fab in Taylor, Texas, will use Samsung's process technologies based on gate-all-around MBCFET transistors, including SF3 and SF2-series (3nm and 2nm-class, respectively), so it ...

On the other hand, Samsung’s multi-bridge-channel FET (MBCFET) technology uses a nanosheet architecture to enhance gate control. That, in turn, enables greater current per stack. Another key ...

It's calling this design an MBCFET, which stands for Multi-Bridge Channel Field Effect Transistor. I want to take a moment to discuss how foundries communicate the advances they expect from ...

Samsung said on Thursday that it has started mass production of chips using its 3-nanometer (nm) process node, its most advanced technology yet for contract chip production. The South Korean tech ...

Samsung's nanosheet design is called MBCFET. Credit: Samsung According to Wccftech, Samsung switched to GAAFET now to get a head start on resolving its engineering difficulties, as it's the first ...