The team has also developed an innovative hot-emitter transistor (HOET), achieving an ultralow sub-threshold swing of less than 1 mV/dec and a peak-to-valley current ratio exceeding 100.

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

Diodes Incorporated has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500 mA-rated open-drain transistors, where all their sources are connected to a common ground ...

Start-up HVVi recently introduced the three-member HVVFET (high-voltage-vertical-field-effect-transistor) family of RF-transistor products. Targeting pulsed-radar and avionics applications, the ...

TOKYO-- (BUSINESS WIRE)-- Toshiba Corporation (TOKYO: 6502) today announced the launch of a new line-up of low input current type transistor output photocouplers that guarantee high CTR (Current ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain tran ...