Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...

Researchers from Pohang University of Science and Technology (POSTECH) and the University of Montpellier have successfully ...

The tester for high-power chips using Silicon Carbide and Gallium Nitride offers efficient testing with high voltage, current ...

global semiconductor giant Infineon Technologies pioneered the development of the world’s first 300 mm power gallium nitride (GaN) wafer technology. While GaN semiconductors have been in use ...

String inverters based on gallium nitride (GaN) semiconductors could represent a valid alternative to devices based on silicon (Si) or silicon carbide (SiC) in the future if the industry manages ...

This achievement, accomplished via metal-organic chemical vapour deposition (MOCVD) on a gallium nitride (GaN ... the formation of high-quality, wafer-scale AA-stacked hBN films, ensuring both ...