Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is eight times today's DRAM density. NEO Semiconductor said its cell array structure is based on ...

3D X-DRAM employs a 3D NAND-like DRAM cell array structure based on capacitor-less floating body cell technology, NEO Semiconductor explains. 3D X-DRAM chips can be manufactured with the same ...

Neo’s new 3D X-DRAM technology uses a 3D NAND-like DRAM cell array structure. It is reportedly cheap to make and easy to produce. Based on Neo’s analysis, we could have individual memory DIMMs with ...

NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

SAN JOSE, Calif., May 13, 2024 /PRNewswire/ -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating ...

Seoul, Korea: Mass production of 1Gb DDR2 DRAM using 60nm process technology is underway via Samsung Electronics. The new technology increases production efficiency by 40% over ...

With these three tools, we first take a macroscopic view of modern DRAM chips to uncover the size, structure, and operation of their subarrays, memory array tiles (MATs), and rows. Then, we analyze ...

As a former DRAM test engineer, I concur with Hat's assessment. We had DRAM designers working on state of the art DDR DRAMs who were designing 4k and 16k DRAMs years ago.