especially those using typical CMOS fabrication methods, so their utility is limited in high voltage applications. Enter the LTC6090, a CMOS amplifier that can handle over 140V P-P signal swings with ...

Called the S7025, it has an integrated limiting amplifier and loss ... HBTs to the standard 0.35-µm CMOS process. Furthermore, the designers have refined the fabrication flow for a smooth ...

Tokyo, Japan, Feb 4, 2008 - (JCN Newswire) - Fujitsu Laboratories, Ltd. today announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology.

Future designs would also benefit from alternatives to the silver–silver chloride electrode used in this device to reduce processing of the amplifier after fabrication. For instance, materials ...

Thanks to these properties, the contacts [use] a planarized back-end, and are CMOS-compatible both in terms of composition and integration scheme.” Detailing some early steps in the device fabrication ...

A single chip power amplifier for GPRS phones, made in pure CMOS and requiring no external components, has been unveiled by Silicon Laboratories. It’s the first time all the disparate components that ...

The basis for creating an electronic image from a CMOS image sensor ... design and wafer fabrication technology have an enormous impact on the system noise. This system noise can be decomposed into ...

Jan. 11, 2016 -- DSP Group®, Inc. (NASDAQ:DSPG), announced the launch of SparkPA – a revolutionary RF Power Amplifier (PA) for the high performance and technically challenging 802.11ac Access Point ...

The 40Gb/s version has already been designed by the consortium and is under fabrication. First characterization results are expected next year. “The capability of manufacturing optical components ...